We examined CoFeB/MgO/CoFeB magnetic tunnel junctions with X-ray diffraction in order to determine the effects of anneal temperature, MgO growth type, and seed layer structure on
electrode and tunnelbarrier crystallinity. For various sample structures and growth methods, we show electrode crystallinity and texturing improving with increasing anneal temperature, while MgO
texturing peaks between 350 C and 400 C. We find the amount and texturing of electrode and barrier crystallinity varies widely with the MgO growth method, with electrode crystallization greatest in
samples with MgO grown using ebeam evaporation. Finally, we report that for our sample structures, Ta/CuN seed layers promote the highest level of CoFeB electrode texturing.
Publisher
Cornell Center for Materials Research
Date
2007-08-29
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Additional Notes
Support for the CCMR is provided through the NSF Grant DMR 0520404, part of the NSF MRSEC Program. Additional support is provided by Cornell University, the State of New York, and
by industrial sources.
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