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View Generic Document: Investigating Mechanical Properties of Thin Films via Nanoindentation

Citation: Griggs, Cornelius (2005). Investigating Mechanical Properties of Thin Films via Nanoindentation. National Institute of Standards and Technology, Technology Administration, U.S. Department of Commerce..
Collection: NIST Summer Undergraduate Research Fellowship (SURF) program  
 
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Title Investigating Mechanical Properties of Thin Films via Nanoindentation
Author(s) Griggs, Cornelius
Keyword(s) thin film
semi-conductor
nanoindentation
substrates
Abstract/Summary Knowledge of the mechanical properties of thin films, particularly silicon-based films, is important for many important applications, including semi-conductors and MEMS. Little is known about the changes in mechanical properties as the size of the material sample is reduced, yet these properties are crucial for device reliability. In our work, nanoindentation is used to investigate basic material properties of oxide and nitride thin films on silicon substrates. Modulus, hardness, residual stress, and strength are studied. Equations have been developed to deconvolute film properties from tests on film substrate bilayers. Crack lengths resulting from nanoindentation are measured using AFM and are then used to predict film residual stress. The effects of temperature, deposition power, pressure, and deposition temperature are compared. Films fabricated at lower temperatures tend to have lower modulus and hardness due to a lower density, though power and vacuum are also important factors. This method can be used to find optimal processing conditions to produce optical mechanical properties, for instance films that are strong with low residual stress.
Publisher National Institute of Standards and Technology, Technology Administration, U.S. Department of Commerce.
Date 2005-01-01
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Created: Thu, 21 Sep 2006, 23:54:47 EST Detailed History


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